60 GHz Band RF MEMS Switch

Author

Vasilache, D. ; Dragoman, M. ; Constantinidis, G. ; Psychias, Y. ; Vladoianu, F. ; Kostopoulos, T. ; Tibeica, C. ; Bary, L. ; Cismaru, A. ; Neculoiu, D. ; Buiculescu, C. ; Petrini, I. ; Plana, R. ; Muller, A.

Author_Institution

National Inst. for Res. & Dev. in Microtechnologies, Bucharest

Volume

1

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

119

Lastpage

122

Abstract

This paper reports on design, simulation and manufacturing of a novel millimeter wave MEMS switch structure. The switching operation utilizes electrostatic force which was the only way for high reliability and wafer scale manufacturing techniques at high frequency. The switching element, a bridge type one, shows an actuation voltage of about 24.5V. Different geometries for the switching element were designed and manufactured. The switches exhibit low insertion losses (0.75dB@60GHz) with good isolation (>50dB@60GHz). The simulated and measured results were in a good agreement for the 60GHz frequency band

Keywords

microswitches; microwave switches; millimetre wave devices; reliability; 0.75 dB; 60 GHz; RF MEMS switch; electrostatic force; millimeter wave MEMS switch; reliability; switching operation; wafer scale manufacturing; Bridge circuits; Electrostatics; Frequency; Microswitches; Millimeter wave technology; Pulp manufacturing; Radiofrequency microelectromechanical systems; Switches; Virtual manufacturing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283946

Filename

4063173