DocumentCode
460327
Title
III/V Wafer Bonding Technology for Wafer-Level Fabrication of GaInAsP/InP Microring Resonators
Author
Dragoi, V. ; Mittendorfer, G. ; Thanner, C. ; Lindner, P. ; Alexe, M. ; Pintilie, L. ; Hamacher, M. ; Heidrich, H.
Author_Institution
EV Group, DI, Florian
Volume
1
fYear
2006
fDate
27-29 Sept. 2006
Firstpage
129
Lastpage
132
Abstract
GaInAsP InP passive microring resonator devices were successfully fabricated using a vertical integration concept with GaInAsP InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication
Keywords
III-V semiconductors; adhesive bonding; gallium arsenide; indium compounds; micromechanical resonators; wafer bonding; BCB adhesive bonding; GaAs; GaInAsP-InP; III-V semiconductors; passive microring resonator; vertical integration; wafer bonding; wafer-level fabrication; Fabrication; Indium phosphide; Optical filters; Optical resonators; Optical sensors; Optical waveguides; Substrates; Temperature; Thermal stresses; Wafer bonding; BCB; adhesive wafer bonding; microring resonators;
fLanguage
English
Publisher
ieee
Conference_Titel
International Semiconductor Conference, 2006
Conference_Location
Sinaia
Print_ISBN
1-4244-0109-7
Type
conf
DOI
10.1109/SMICND.2006.283949
Filename
4063176
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