Title :
III/V Wafer Bonding Technology for Wafer-Level Fabrication of GaInAsP/InP Microring Resonators
Author :
Dragoi, V. ; Mittendorfer, G. ; Thanner, C. ; Lindner, P. ; Alexe, M. ; Pintilie, L. ; Hamacher, M. ; Heidrich, H.
Author_Institution :
EV Group, DI, Florian
Abstract :
GaInAsP InP passive microring resonator devices were successfully fabricated using a vertical integration concept with GaInAsP InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication
Keywords :
III-V semiconductors; adhesive bonding; gallium arsenide; indium compounds; micromechanical resonators; wafer bonding; BCB adhesive bonding; GaAs; GaInAsP-InP; III-V semiconductors; passive microring resonator; vertical integration; wafer bonding; wafer-level fabrication; Fabrication; Indium phosphide; Optical filters; Optical resonators; Optical sensors; Optical waveguides; Substrates; Temperature; Thermal stresses; Wafer bonding; BCB; adhesive wafer bonding; microring resonators;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.283949
