Rapid Photothermal Processing for Silicon Solar Cells Fabrication

Author

Shishiyanu, S. ; Singh, R. ; Shishiyanu, T. ; Lupan, O. ; Railean, S. ; Sargu, S.

Author_Institution

Dept. of Microelectron. & Semicond. Devices, Moldova Tech. Univ., Chisinau

Volume

1

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

175

Lastpage

178

Abstract

In our report we demonstrated the advantage of the rapid photothermal processing (RPP) technology compare to conventional furnace technology for solar cells fabrication: short time, low thermal budget and low temperature processing, high heating-cooling rates. The n⁺-p-Si junctions were obtained from electrochemical deposited P source by rapid photothermal processing enhanced diffusion for 16 s at 900 degC and 1000 degC. The emitter sheet resistivity decreased from 1100 Omega/sq, RPP duration 60 s to 340 Omega/sq, RPP duration 200s at 999 degC. The concentration profiles of P in Si after RPP enhanced diffusion were analyzed. The regime of emitter ohmic contact formation is RPP at 310 degC for 8-10s. The photoelectrical parameters of the obtained n⁺-p and p⁺-n-Si photovoltaic cell are respective FF=33%, =4.1% and FF=40%, =1.1%. The obtained results demonstrated that all steps of the n⁺-p and p⁺-n Si solar cells fabrication can be realized by the rapid photothermal processing technology

Keywords

diffusion; low-temperature techniques; ohmic contacts; p-n junctions; photothermal conversion; silicon; solar cells; thermophotovoltaic cells; 1000 C; 16 s; 200 s; 310 C; 60 s; 8 to 10 s; 900 C; RPP enhanced diffusion; RPP technology; Si; electrochemical deposition; emitter ohmic contact formation; emitter sheet resistivity; furnace technology; low temperature processing; low thermal budget; n⁺-p photovoltaic cell; n⁺-p-Si junctions; p⁺-n-Si photovoltaic cell; rapid photothermal processing; silicon solar cells fabrication; Conductivity; Fabrication; Integrated circuit technology; Ohmic contacts; Oxidation; Photovoltaic cells; Rapid thermal processing; Semiconductor devices; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283961

Filename

4063188