Spin Analog-to-Digital Convertor Using Magnetic Tunnel Junction and Spin Hall Effect

Author

Yanfeng Jiang ; Yang Lv ; Jamali, Mahdi ; Jian-Ping Wang

Author_Institution

Univ. of Minnesota, Minneapolis, MN, USA

Volume

36

Issue

5

fYear

2015

fDate

May-15

Firstpage

511

Lastpage

513

Abstract

A spin-based analog-to-digital converter (ADC) using magnetic tunnel junctions (MTJs) is proposed in this letter. Our proposal is based on a novel high-speed low-power MTJ comparator that is controlled through spin Hall effect and voltage-controlled magnetic anisotropy effects. According to the simulation results, spin ADC offers features including high sampling rate, low-power consumption, and less chip area occupation for higher bit resolution while provides the benefit of nonvolatility of conversion results.

Keywords

Hall effect; analogue-digital conversion; comparators (circuits); low-power electronics; magnetic anisotropy; magnetic tunnelling; ADC; bit resolution; conversion nonvolatility; high-speed low-power MTJ comparator; low-power consumption; magnetic tunnel junction; sampling rate; spin Hall effect; spin analog-to-digital convertor; voltage-controlled magnetic anisotropy effects; CMOS integrated circuits; Hall effect; Integrated circuit modeling; Junctions; Magnetic tunneling; Semiconductor device modeling; Switches; Analog-to-Digital Converter (ADC); Analog-to-digital converter (ADC); Magnetic Tunnel Junction; Spin Hall Effect; Voltage Controlled Magnetic Anisotropy; magnetic tunnel junction; spin hall effect; voltage controlled magnetic anisotropy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2416689

Filename

7070706