DocumentCode :
460650
Title :
Behavior Model and Experimental Research of Monolithic CMOS Compatible Photodetector and Preamplifier
Author :
Gu, Ming ; Chen, HongDa ; Huang, Jiale ; Mao, Luhong
Author_Institution :
State Key Lab. On Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Volume :
3
fYear :
2006
fDate :
25-28 June 2006
Firstpage :
1933
Lastpage :
1936
Abstract :
The behavior model of the double photo-diodes (DPD) is presented in the paper. The relationship between photocurrent and optical power is shown. With this model, a 1 GHz monolithic photo-detector (PD) and trans-impedance amplifier (TIA) is designed and fabricated with the standard 0.35 mum CMOS technique. The experimental results show that the -3 dB bandwidth is 754 MHz, and the 1 GHz wave of the transient response can be got
Keywords :
CMOS integrated circuits; integrated circuit design; monolithic integrated circuits; optical fibre fabrication; photodetectors; photodiodes; preamplifiers; transient response; 0.35 micron; 1 GHz; 754 MHz; DPD; TIA; double photo-diodes; monolithic CMOS; monolithic photo-detector; optical power; photocurrent; photodetector; preamplifier; transient response; transimpedance amplifier; Bandwidth; Integrated circuit interconnections; Optical devices; Optical interconnections; Optical receivers; Optical waveguides; Optoelectronic devices; Photodetectors; Preamplifiers; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems Proceedings, 2006 International Conference on
Conference_Location :
Guilin
Print_ISBN :
0-7803-9584-0
Electronic_ISBN :
0-7803-9585-9
Type :
conf
DOI :
10.1109/ICCCAS.2006.285051
Filename :
4064277
Link To Document :
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