• DocumentCode
    46102
  • Title

    A Three-Way Reconfigurable Power Divider/Combiner

  • Author

    Haijun Fan ; Junping Geng ; Xianling Liang ; Ronghong Jin ; Xilang Zhou

  • Author_Institution
    Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
  • Volume
    63
  • Issue
    3
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    986
  • Lastpage
    998
  • Abstract
    In this paper, a three-way reconfigurable power divider/combiner is proposed based on novel switch element with matching network (SEMN) and reconfigurable impedance transformer network (RITN). A good matching performance and a high isolation of the SEMN with one p-i-n diode can be obtained by the parasitic inductance and reverse capacitance of the p-i-n diode involved in matching circuits. With different parameters of one p-i-n diode under forward bias and reverse bias, the reconfigurable impedance matching can be obtained by the RITN with a simple structure. By using four RITNs and nine SEMNs, the three-way reconfigurable power divider/combiner can provide seven different states in the three-path mode, the two-path mode, and the single-path mode. For verification, a 5-GHz three-way reconfigurable power divider/combiner is designed and fabricated. In the three-path mode, measured insertion losses from port 1 to transmission ports (port 2, port 3, and port 4) are less than 0.74 dB and the isolations between transmission ports are higher than 32.1 dB. In the two-path mode with three states, the measured insertion losses are less than 0.93 dB; the isolations between transmission ports, transmission ports and isolation ports, and port 1 and isolation ports are higher than 27.5, 35.1, and 30.5 dB, respectively. In the single-path mode with three states, the measured insertion losses are less than 1.13 dB; the measured isolations between transmission ports and isolation ports are higher than 28.8 dB, and the isolations between port 1 and isolation ports are higher than 28.2 dB at the design frequency.
  • Keywords
    impedance convertors; impedance matching; p-i-n diodes; power combiners; power dividers; RITN; SEMN; forward bias; frequency 5 GHz; insertion losses; isolation ports; matching circuits; p-i-n diode; parasitic inductance; power combiner; reconfigurable impedance matching; reconfigurable impedance transformer network; reverse bias; reverse capacitance; single-path mode; switch element with matching network; three-path mode; three-way reconfigurable power divider; transmission ports; two-path mode; Capacitors; Impedance; Loss measurement; P-i-n diodes; Ports (Computers); Power dividers; Switches; Power divider/combiner; reconfigurable divider/combiner; reconfigurable impedance transformer network (RITN); switch element with matching network (SEMN);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2015.2395421
  • Filename
    7029096