Title :
Preamplifiers Near 18 GHz with GaAs Field-Effect Transistors
Author :
Bachtold, W. ; Jutzi, W.
Author_Institution :
IBM Zurich Research Laboratory, 8803 Ruschlikon, Switzerland
Keywords :
Bandwidth; FETs; Frequency; Gallium arsenide; Impedance; MESFETs; Noise figure; Noise measurement; Preamplifiers; Semiconductor device measurement;
Conference_Titel :
Microwave Conference, 1971. 2nd European
Conference_Location :
Stockholm, Sweden
DOI :
10.1109/EUMA.1971.331449
