DocumentCode
461842
Title
Influence of Transverse Instability on the Efficiency of Impatt Diodes
Author
van Iperen, B.B.
Author_Institution
Philips Rcsearch Laboratories, Eindhoven-The Netherlands
Volume
1
fYear
1973
fDate
4-7 Sept. 1973
Firstpage
1
Lastpage
4
Abstract
Measuring results of large-signal impedance, ac voltage and Io-Vo characteristics (Vo and Io dc voltage and current resp.) on X-band Si Impatt diodes in pulse operation show that the efficiency is limited by saturation of the ae voltage at about 0.25 Vo, independent of the de current and the diode impedance. On reaching this saturation value the Io-Vo curve and the output curve show a knee, indicating the onset of an instability. The effect is explained by taking into account the influence of leakage currents caused by impact ionisation in the drift region on the Io-Vo curves at constant ac voltage.
Keywords
Diodes; Electrical resistance measurement; Impedance measurement; Knee; Leakage current; Microwave measurements; Power measurement; Pulse measurements; Semiconductor device measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1973. 3rd European
Conference_Location
Brussels, Belgium
Type
conf
DOI
10.1109/EUMA.1973.331594
Filename
4130177
Link To Document