DocumentCode :
461843
Title :
A High Power Gaas Schottky Barrier Impatt Diode in 30GHZ Band
Author :
Migitaka, Masatoshi ; Nakamura, Michiharu ; Saito, Katsutoshi ; Sekine, Kenji
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, JAPAN
Volume :
1
fYear :
1973
fDate :
4-7 Sept. 1973
Firstpage :
1
Lastpage :
4
Keywords :
Capacitance; Electromagnetic heating; Electrons; Epitaxial layers; Gallium arsenide; Inductance; Schottky barriers; Schottky diodes; Thermal conductivity; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1973. 3rd European
Conference_Location :
Brussels, Belgium
Type :
conf
DOI :
10.1109/EUMA.1973.331595
Filename :
4130178
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=461843
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