Single-chip InGanN green light-emitting diodes with 3W optical output power

Author

Wei Wang ; Yong Cai ; Juan Hong Huang ; Wei Huang ; Haiou Li ; Xin Lin ; Ximing Zhou ; Baosun Zhang

Author_Institution

Key Lab. of Nano Devices & Applic., Suzhou Inst. of Nano-tech & Nano-bionics, Suzhou, China

Volume

50

Issue

6

fYear

2014

fDate

March 13 2014

Firstpage

457

Lastpage

459

Abstract

The characteristics of a high-power single-chip green light-emitting diode (LED) operating with a >40 W input power are reported. The single-chip large area LED chip, which consists of 24 stages, was fabricated by using commercial wafers with chip dimensions of 6.5 × 5 mm². The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Optical output power and forward voltage at 500 mA were obtained to be 3 W and 83 V, respectively, which demonstrates an external quantum efficiency (EQE) of 10.4% with a 41.5 W input power.

Keywords

III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors; InGaN; LED; chip dimensions; commercial wafers; current 500 mA; direct operation conditions; electrical characteristics; external quantum efficiency; forward voltage; high-power single-chip green light-emitting diode; injection current; optical characteristics; optical output power; power 3 W; power 41.5 W; single-chip InGaN green light-emitting diodes; voltage 83 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.2980

Filename

6777236