Title :
Noise Considerations in Cascaded Single-Stage Distributed Amplifiers
Author :
Zadeh, Amin Ronagh ; Nikmehr, Dr Saied
Author_Institution :
Dept. of Electr. Eng., Sahand Univ. of Technol., Tabriz
Abstract :
Exact formulas for the noise parameters of a cascaded single-stage distributed amplifier (CSSDA) utilizing GaAs MESFETs as active devise have been developed. The method is rigorous in the sense that it takes into account the contribution of all the noise sources of the amplifier as a two port network. The analysis is worked out by using chain or ABCD matrices of the transistors and interstage networks. Finally, after the dependence of the noise characteristics on the circuit parameters is discussed, the noise figure of a DC-25 GHz three stage module is computed and compared with simulation results using the full nonunilateral model of the transistor. The result of the simulation for the completed amplifier is in good agreement with the calculated noise parameters by our method
Keywords :
III-V semiconductors; MESFET circuits; cascade networks; circuit noise; distributed amplifiers; gallium arsenide; microwave amplifiers; two-port networks; 25 GHz; ABCD matrices; GaAs; GaAs MESFET; cascaded single-stage distributed amplifiers; full nonunilateral model; interstage networks; noise figure; noise parameters; noise sources; two port network; Active noise reduction; Circuit noise; Distributed amplifiers; Gallium arsenide; Impedance; MESFETs; Noise figure; Noise generators; Transmission line matrix methods; Voltage;
Conference_Titel :
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
98432-3814-1
DOI :
10.1109/ICECE.2006.355298
