Noise Considerations in Cascaded Single-Stage Distributed Amplifiers

Author

Zadeh, Amin Ronagh ; Nikmehr, Dr Saied

Author_Institution

Dept. of Electr. Eng., Sahand Univ. of Technol., Tabriz

fYear

2006

fDate

19-21 Dec. 2006

Firstpage

92

Lastpage

95

Abstract

Exact formulas for the noise parameters of a cascaded single-stage distributed amplifier (CSSDA) utilizing GaAs MESFETs as active devise have been developed. The method is rigorous in the sense that it takes into account the contribution of all the noise sources of the amplifier as a two port network. The analysis is worked out by using chain or ABCD matrices of the transistors and interstage networks. Finally, after the dependence of the noise characteristics on the circuit parameters is discussed, the noise figure of a DC-25 GHz three stage module is computed and compared with simulation results using the full nonunilateral model of the transistor. The result of the simulation for the completed amplifier is in good agreement with the calculated noise parameters by our method

Keywords

III-V semiconductors; MESFET circuits; cascade networks; circuit noise; distributed amplifiers; gallium arsenide; microwave amplifiers; two-port networks; 25 GHz; ABCD matrices; GaAs; GaAs MESFET; cascaded single-stage distributed amplifiers; full nonunilateral model; interstage networks; noise figure; noise parameters; noise sources; two port network; Active noise reduction; Circuit noise; Distributed amplifiers; Gallium arsenide; Impedance; MESFETs; Noise figure; Noise generators; Transmission line matrix methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2006. ICECE '06. International Conference on

Conference_Location

Dhaka

Print_ISBN

98432-3814-1

Type

conf

DOI

10.1109/ICECE.2006.355298

Filename

4178416