DocumentCode :
462302
Title :
Sub-Electron noise measurements on RNDR Devices
Author :
Wolfel, Stefan ; Herrmann, Sven ; Lechner, Peter ; Lutz, Gerhard ; Porro, Matteo ; Richter, Rainer ; Struder, Lothar ; Treis, Johannes
Author_Institution :
Max-Planck-Inst. fur extraterrestrische Phys., Garching
Volume :
1
fYear :
2006
fDate :
Oct. 29 2006-Nov. 1 2006
Firstpage :
63
Lastpage :
69
Abstract :
In this work we demonstrate theoretically and experimentally the capability to reduce the readout noise of an optical and X-ray photon detector based on the semiconductor DEPFET device below a level of only 0.3e- ENC (equivalent noise charge). The readout method used is called "Repetitive Non Destructive Readout" (RNDR) and was realised by placing two single DEPFET-devices next to each other and by coupling their charge storing region by an additional gate. By transferring the stored charge from one DEPFET to the other and vice versa the same charge can be measured non-destructively and arbitrarily often. Taking the average value of a large number n of these measurements, the noise is reduced by 1/radicn. The main advantage of such a detector is to greatly reduce the influence of the 1/f noise to the readout noise. The theoretically and experimentally achievable resolution for different operating parameters (leakage current, readout noise, number and duration of readouts) was investigated by Monte-Carlo simulations and verified on a real RNDR minimatrix (pixelarray). Single optical photon detection with high quantum efficiency and, even more fascinating, the possibility to distinguish between different numbers of photons e.g. 100 from 101 is presented in measurements.
Keywords :
1/f noise; Monte Carlo methods; X-ray detection; leakage currents; nondestructive readout; photodetectors; semiconductor counters; semiconductor device noise; 1/f noise; Monte Carlo simulations; RNDR devices; X-ray photon detector; active pixel sensor; equivalent noise charge; leakage current; low noise readout; optical photon detector; quantum efficiency; repetitive nondestructive readout; semiconductor DEPFET device; single optical photon detection; sub-electron noise measurements; Charge measurement; Current measurement; Noise level; Noise measurement; Noise reduction; Optical devices; Optical noise; Semiconductor device noise; X-ray detection; X-ray detectors; Active Pixel Sensor; DEPFET; RNDR; low noise readout; single optical photon detection; sub-electron noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
ISSN :
1095-7863
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2006.356109
Filename :
4178948
Link To Document :
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