Title :
Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons
Author :
Cindro, Vladimir ; Kramberger, Gregor ; Lozano, Manuel ; Mandic, Igor ; Mikuz, Marko ; Pellegrini, Giulio ; Pulko, Joef ; Ullan, Miguel ; Zavrtanik, Marko
Author_Institution :
Jozef Stefan Inst., Ljubljana
fDate :
Oct. 29 2006-Nov. 1 2006
Abstract :
Trapping times of drifting electrons and holes were measured in high resistivity standard, oxygenated and magnetic Czochralski p-type materials with charge correction method. Diodes were irradiated with neutrons up to equivalent fluence Phi = 3 times 1014 cm-2. Trapping times were parameterized as 1/tau = betaPhi. Average beta was measured to be betae = 4.2 times 10-16 cm2 ns-1 for electrons and betah = 4.3 times 10-16 cm2 ns-1 for holes.
Keywords :
electron traps; elemental semiconductors; hole traps; magnetic materials; neutron effects; silicon; silicon radiation detectors; Si; charge correction method; diodes; electron trapping; hole trapping; magnetic Czochralski p-type material; p-type silicon; trapping time; Charge carrier processes; Charge measurement; Conductivity; Current measurement; Diodes; Electron traps; Magnetic materials; Measurement standards; Neutrons; Silicon;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2006.356125
