DocumentCode :
462352
Title :
Performance of Radiation Detectors with the Pulse-Reset Readout Based on PentaFET
Author :
Polushkin, Vladimir ; Sharp, Sarah
Author_Institution :
Oxford Instruments Nano-Anal., High Wycombe
Volume :
1
fYear :
2006
fDate :
Oct. 29 2006-Nov. 1 2006
Firstpage :
396
Lastpage :
400
Abstract :
X-ray nano-analytical tools impose stringent requirements on low-energy resolution and long-term peak stability of radiation detection systems. The front contact interface, noise performance of a read-out FET, dielectric properties of the feedback capacitor and baseline restoration algorithm play crucial roles in meeting these requirements. An electronic reset method based on PentaFET is well established in spectrometry with Si(Li) detectors. This paper shows how the same method offers distinct advantages for silicon drift chambers (SDD) when compared with other readout methods employing various continuous discharge mechanisms. While the resolution at low X-ray energies for the pn-junction SDDs is currently limited by charge collection, the quasi-Schottky junction Si(Li) detectors still offer the best prospects for low energy X-ray spectrometry. An electronic noise as low as 3.34e (30.39 eV) and 4.03e (36.11 eV) FWHM have been achieved with 10 mm2 and 30 mm2 area Si(Li) detectors coupled to the PentaFETtrade with no compromise on the low energy tailing. A carbon resolution of 49.95 eV has been measured with our new INCAPentaFET-x3trade 30 mm2 detector as a part of the complete energy dispersive spectrometer mounted on the scanning electron microscope (SEM).
Keywords :
X-ray detection; X-ray spectroscopy; field effect transistors; readout electronics; silicon radiation detectors; 49.95 eV; PentaFET; Si(Li) detector; X-ray nano-analytical tools; X-ray spectrometry; baseline restoration algorithm; dielectric property; electronic reset method; energy dispersive spectrometer; feedback capacitor; front contact interface; noise performance; pulse-reset readout; radiation detection system; radiation detectors; read-out FET; scanning electron microscope; silicon drift chambers; Capacitors; Dielectrics; Energy resolution; FETs; Feedback; Radiation detectors; Scanning electron microscopy; Silicon; Spectroscopy; Stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
ISSN :
1095-7863
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2006.356183
Filename :
4179022
Link To Document :
بازگشت