Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

Author

Ya-Hsiang Tai ; Chun-Yi Chang ; Chung-Lun Hsieh ; Yung-Hsuan Yang ; Wei-Kuang Chao ; Huan-Ean Chen

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

35

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

229

Lastpage

231

Abstract

In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.

Keywords

amorphous semiconductors; elemental semiconductors; gallium compounds; indium compounds; semiconductor device noise; silicon; thin film transistors; InGaZnO; Si; amorphous indium gallium zinc oxide; amorphous silicon; drain current; low frequency noise; low temperature polycrystalline silicon; noise behavior; thin film transistor; Amorphous silicon; Current measurement; Noise measurement; Signal to noise ratio; Thin film transistors; Thin-film transistor (TFTs); active pixel sensor (APS); amorphous indium-gallium-zinc oxide (a-IGZO); low frequency noise (LFN);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2291565

Filename

6701182