Author :
Arai, Y. ; Hazumi, M. ; Ikegami, Y. ; Kohriki, T. ; Tajima, O. ; Terada, S. ; Tsuboyama, T. ; Unno, N. ; Ushiroda, H. ; Ikeda, H. ; Hara, K. ; Ishino, H. ; Kawasaki, T. ; Martin, E. ; Varner, G. ; Tajima, H. ; Ohno, M. ; Fukuda, K. ; Komatsubara, H. ; Ida
Abstract :
We describe a new pixel detector development project using a 0.15 μm fully-depleted CMOS SOI (silicon-on-insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode test element group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to β-rays is confirmed. Back gate effects on the top circuits are observed and discussed.
Keywords :
β-ray detection; CMOS integrated circuits; position sensitive particle detectors; semiconductor counters; silicon-on-insulator; 0.15 micron; CMOS SOI; back gate effects; monolithic pixel detector; silicon-on-insulator technology; CMOS process; CMOS technology; Circuit testing; Costs; Diodes; Implants; Physics; Radiation detector circuits; Silicon on insulator technology; Threshold voltage;
