Monolithic Pixel Detector in a 0.15 μm SOI Technology

Author

Arai, Y. ; Hazumi, M. ; Ikegami, Y. ; Kohriki, T. ; Tajima, O. ; Terada, S. ; Tsuboyama, T. ; Unno, N. ; Ushiroda, H. ; Ikeda, H. ; Hara, K. ; Ishino, H. ; Kawasaki, T. ; Martin, E. ; Varner, G. ; Tajima, H. ; Ohno, M. ; Fukuda, K. ; Komatsubara, H. ; Ida

Author_Institution

IPNS, High Energy Accelerator Res. Organ., Tsukuba

Volume

3

fYear

2006

fDate

Oct. 29 2006-Nov. 1 2006

Firstpage

1440

Lastpage

1444

Abstract

We describe a new pixel detector development project using a 0.15 μm fully-depleted CMOS SOI (silicon-on-insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode test element group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to β-rays is confirmed. Back gate effects on the top circuits are observed and discussed.

Keywords

β-ray detection; CMOS integrated circuits; position sensitive particle detectors; semiconductor counters; silicon-on-insulator; 0.15 micron; CMOS SOI; back gate effects; monolithic pixel detector; silicon-on-insulator technology; CMOS process; CMOS technology; Circuit testing; Costs; Diodes; Implants; Physics; Radiation detector circuits; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2006. IEEE

Conference_Location

San Diego, CA

ISSN

1095-7863

Print_ISBN

1-4244-0560-2

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2006.354171

Filename

4179284