DocumentCode
46361
Title
MRAM PUF: A Novel Geometry Based Magnetic PUF With Integrated CMOS
Author
Das, Jayita ; Scott, Kevin ; Rajaram, Srinath ; Burgett, Drew ; Bhanja, Sanjukta
Author_Institution
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Volume
14
Issue
3
fYear
2015
fDate
May-15
Firstpage
436
Lastpage
443
Abstract
This manuscript addresses a novel MRAM-based physically unclonable function (PUF). The PUF responses are generated using the unique energy-tilt, which is an outcome of the random geometric variations in the MRAM cells. We have verified relevant attributes of this PUF through extensive magnetic simulations and in-house fabrication results. Our fabricated PUF cells generate entropy as high as 0.99, which is comparable to most of its competitors. To our knowledge, the footprint of the PUF cells is also lower than the majority of silicon PUFs. Also, the authentication control algorithm for this PUF requires very low additional control-steps. We conclude our discussion of this novel PUF with a study of authentication overhead and protocols required by the PUF system in terms of area, power, and delay.
Keywords
CMOS memory circuits; MRAM devices; cryptographic protocols; entropy; MRAM PUF; MRAM-based physically unclonable function; authentication control algorithm; authentication overhead; authentication protocols; entropy; geometry based magnetic PUF; integrated CMOS; magnetic simulations; Arrays; Couplings; Fabrication; Geometry; Magnetic tunneling; Scanning electron microscopy; Stationary state; Easy axis; MRAM; PUF; easy axis; energy; geometric variations; process variations; randomness;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2015.2397951
Filename
7029126
Link To Document