• DocumentCode
    46361
  • Title

    MRAM PUF: A Novel Geometry Based Magnetic PUF With Integrated CMOS

  • Author

    Das, Jayita ; Scott, Kevin ; Rajaram, Srinath ; Burgett, Drew ; Bhanja, Sanjukta

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
  • Volume
    14
  • Issue
    3
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    436
  • Lastpage
    443
  • Abstract
    This manuscript addresses a novel MRAM-based physically unclonable function (PUF). The PUF responses are generated using the unique energy-tilt, which is an outcome of the random geometric variations in the MRAM cells. We have verified relevant attributes of this PUF through extensive magnetic simulations and in-house fabrication results. Our fabricated PUF cells generate entropy as high as 0.99, which is comparable to most of its competitors. To our knowledge, the footprint of the PUF cells is also lower than the majority of silicon PUFs. Also, the authentication control algorithm for this PUF requires very low additional control-steps. We conclude our discussion of this novel PUF with a study of authentication overhead and protocols required by the PUF system in terms of area, power, and delay.
  • Keywords
    CMOS memory circuits; MRAM devices; cryptographic protocols; entropy; MRAM PUF; MRAM-based physically unclonable function; authentication control algorithm; authentication overhead; authentication protocols; entropy; geometry based magnetic PUF; integrated CMOS; magnetic simulations; Arrays; Couplings; Fabrication; Geometry; Magnetic tunneling; Scanning electron microscopy; Stationary state; Easy axis; MRAM; PUF; easy axis; energy; geometric variations; process variations; randomness;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2015.2397951
  • Filename
    7029126