DocumentCode
46385
Title
Automatic tuning circuit for bulk-controlled subthreshold MOS resistors
Author
Vlassis, S. ; Khateb, Fabian
Author_Institution
Phys. Dept., Patras Univ., Rio Patras, Greece
Volume
50
Issue
6
fYear
2014
fDate
March 13 2014
Firstpage
432
Lastpage
434
Abstract
A simple automatic tuning circuit is proposed which is suitable for controlling very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2 MΩ nominal value presents about ± 0.6% variation for -20-80°C temperature range, ±5% variation at process/temperature (P/T) corners and total harmonic distortion = -42 dB for differential signals. The supply voltage was VDD = 1 V and the current consumption was about 470 nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35 μm CMOS process.
Keywords
CMOS integrated circuits; MOSFET; circuit tuning; harmonic distortion; resistors; CMOS; automatic tuning circuit; bulk-controlled sub-threshold MOS resistors; channel resistance; process/temperature corners; resistance 1.2 Mohm; size 0.35 mum; total harmonic distortion; voltage 1 V; weak-inverted transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.4181
Filename
6777258
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