DocumentCode
46387
Title
Investigation of Physically Unclonable Functions Using Flash Memory for Integrated Circuit Authentication
Author
Moon-Seok Kim ; Dong-Il Moon ; Sang-Kyung Yoo ; Sang-Han Lee ; Yang-Kyu Choi
Author_Institution
Attached Inst., ETRI, Daejeon, South Korea
Volume
14
Issue
2
fYear
2015
fDate
Mar-15
Firstpage
384
Lastpage
389
Abstract
Flash memory devices are investigated to confirm their application as physically unclonable functions (PUFs). Inherent fluctuations in the characteristics of flash memory devices, even with identical fabrication processes, produce different outputs, which are useful for device fingerprints. A difference in programming/erasing efficiency arises from a widely distributed threshold voltage. However, statistical fluctuations in the threshold voltage represent an advantage for PUF applications. The characteristics of PUFs, such as their unclonability, uncontrollability, unpredictability, and robustness, are investigated using fabricated flash memory devices. A simulation study is performed to support the experimental results and to show that the unpredictability is induced by variations in the gate dielectric thickness.
Keywords
dielectric properties; flash memories; integrated circuit testing; PUF; device fingerprints; erasing efficiency arises; flash memory devices; gate dielectric thickness; physically unclonable functions; programming efficiency; statistical fluctuations; threshold voltage; unpredictability; Authentication; Flash memories; Logic gates; Programming; Robustness; Tunneling; Flash memory; GAA (gate-all-around) transistors; SONOS (silicon/ oxide/ nitride/ oxide/silicon); SONOS (silicon/oxide/nitride/oxide/silicon); device authentication; device fingerprint; flash memory; gate-all-around (GAA) transistors; physically unclonable function (PUF); process variation; programming efficiency;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2015.2397956
Filename
7029131
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