Title :
Switching Transients of Power Diode
Author :
Eio, S. ; Shammas, N.Y.A.
Author_Institution :
Staffordshire Univ., Stafford
Abstract :
The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability
Keywords :
carrier lifetime; power semiconductor diodes; radiation effects; semiconductor doping; switching transients; carrier lifetime killing; encapsulation; gold doping; high-energy irradiation; low conduction losses; manufacturing process; metallisation; monolithic devices; platinum doping; power diode; reverse recovery; switching transients; Charge carrier lifetime; Circuits; Impedance; Inductance; Power semiconductor switches; Semiconductor diodes; Space charge; Steady-state; Switching frequency; Voltage; Switching transients; carrier lifetime killing; reverse recovery time;
Conference_Titel :
Universities Power Engineering Conference, 2006. UPEC '06. Proceedings of the 41st International
Conference_Location :
Newcastle-upon-Tyne
Print_ISBN :
978-186135-342-9
DOI :
10.1109/UPEC.2006.367541
