Investigation into the Loss Density Distribution of IGBT Devices

Author

Trigkidis, G. ; Bousbaine, A. ; Thorn, R.

Author_Institution

Derby Univ.

Volume

2

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

589

Lastpage

592

Abstract

The major cause of power semiconductor devices failure is heat. This is no surprise since industry and commercial applications continually require higher power densities and decreased packaging solutions. The pressure is now concentrated on thermal simulation tools that need to take into account detailed device structures and different physical phenomena/parameters that take place inside the semiconductor structure during operation. This paper explains a method to calculate in detail the power loss distribution inside the IGBT device

Keywords

failure analysis; insulated gate bipolar transistors; losses; power semiconductor devices; semiconductor device models; thermal analysis; IGBT devices; physical phenomena; power loss density distribution; power semiconductor device failure; semiconductor device structure; thermal simulation tools; Anodes; Capacitance; Heat transfer; Insulated gate bipolar transistors; Numerical models; Power electronics; Predictive models; Temperature dependence; Temperature distribution; Voltage; IGBT; lumped parameter; thermal modelling;

fLanguage

English

Publisher

ieee

Conference_Titel

Universities Power Engineering Conference, 2006. UPEC '06. Proceedings of the 41st International

Conference_Location

Newcastle-upon-Tyne

Print_ISBN

978-186135-342-9

Type

conf

DOI

10.1109/UPEC.2006.367546

Filename

4218753