Title :
Highly Sensitive Midinfrared Phototransistor
Author :
An, Zhenghua ; Ueda, T. ; Komiyama, S. ; Hirakawa, K.
Author_Institution :
Tokyo Univ., Tokyo
Abstract :
We propose and demonstrate a highly sensitive phototransistor (14.5 mum). An electrically isolated quantum well (QW) island serves as a photo-sensitive gate (200 times 50 mum) to a nearby two-dimensional conducting channel. Photoelectrons are excited via intersubband transition and escape from the QW, causing the QW to charge up positively. This is, in turn, sensed by the conductance increase in the nearby channel. Reducing the lateral size of the photo-sensitive QW gate (~1 times 1 mum), we achieve photon-counting level sensitivity.
Keywords :
photon counting; phototransistors; quantum wells; electrically isolated quantum well; lateral size; photon-counting level sensitivity; photosensitive QW gate; photosensitive gate; sensitive midinfrared phototransistor; two-dimensional conducting channel; wavelength 14.5 mum; Background noise; Electromagnetic wave absorption; Electrons; Infrared detectors; Lighting; Phototransistors; Quantum dots; Semiconductor device noise; Superconducting photodetectors; Voltage;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368238
