Superlattice Electronic Devices as High-Performance Millimeter- and Submillimeter-Wave Sources: Current Status

Author

Eisele, H. ; Farrer, Ian ; Miles, Bob ; Linfield, Edmund

Author_Institution

Leeds Univ., Leeds

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

37

Lastpage

37

Abstract

GaAs/AlAs superlattices were grown by molecular-beam epitaxy to study how thermal management and circuit parameters affect the performance of these structures when used as negative differential resistance devices. The fabrication process was adopted from that of GaAs tunnel injection transit-time diodes. The devices were evaluated between 60-270 GHz. RF power levels >70 mW with DC-to-RF conversion efficiencies >4% and >10 mW were measured at around 62 GHz and 130 GHz, respectively. These results demonstrate the potential of these devices as continuous-wave terahertz sources.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor superlattices; thermal management (packaging); GaAs-AlAs; circuit parameters; continuous-wave terahertz sources; frequency 60 GHz to 270 GHz; millimeter-wave sources; molecular-beam epitaxy; submillimeter-wave sources; superlattice electronic devices; thermal management; tunnel injection transit-time diodes; Diodes; Fabrication; Gallium arsenide; Molecular beam epitaxial growth; Radio frequency; Submillimeter wave circuits; Superlattices; Thermal management; Thermal management of electronics; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368246

Filename

4221980