A Frequency Doubler/Modulator With 4.5 dBm Output Power at 170 GHz Using SiGe HBTs

Author

Yihu Li ; Wang Ling Goh ; Yong-Zhong Xiong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

25

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

181

Lastpage

183

Abstract

A sub-terahertz frequency doubler with signal modulation is proposed and analyzed in this letter. An 85 GHz input signal is modulated by a differential pair, and a push-push frequency doubler with capacitive degeneration technique is designed to obtain the 170 GHz modulated output signal. Via the use of negative impedance to eliminate the leakage current of transistors, the proposed enhanced push-push frequency doubler achieves a power efficiency of 8.5% and a maximum output power of 4.5 dBm at 170 GHz without applying a modulation signal. The 0.13 μm SiGe BiCMOS process is used to fabricate the proposed design and the total chip area is 0.75 × 0.8 mm².

Keywords

BiCMOS integrated circuits; Ge-Si alloys; frequency multipliers; heterojunction bipolar transistors; negative impedance convertors; BiCMOS process; HBT; SiGe; capacitive degeneration technique; differential pair; efficiency 8.5 percent; frequency 170 GHz; frequency 85 GHz; frequency doubler/modulator; leakage current; negative impedance; push-push frequency doubler; signal modulation; size 0.13 mum; sub-terahertz frequency doubler; Frequency modulation; Heterojunction bipolar transistors; Impedance; Power generation; Silicon germanium; Capacitive degeneration; frequency doubler; sub-terahertz;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2390534

Filename

7029142