A New Test Structure for Shallow Trench Isolation (STI) Depth Monitor

Author

Wang, Qingfeng ; Pendharkar, Sameer ; Hu, Binghua ; Russell, Bill ; Jones-Williams, Pam

Author_Institution

Texas Instrum. Inc., Dallas

fYear

2007

fDate

19-22 March 2007

Firstpage

29

Lastpage

31

Abstract

A non-destructive electrical process monitor has been developed for shallow trench isolation (STI) depth control in an advanced high voltage analog process. An implanted p-body (LDMOS back gate) pinch resistor has been demonstrated to accurately measure the depth of the shallow trench isolation. STI depth can be further correlated to critical LDMOS parameters such as Rdson (on resistance) and BVdss (off-state device breakdown). This technique can be easily implemented in the scribe line to monitor STI depth as well as to characterize variation in high voltage component.

Keywords

MOSFET; isolation technology; nondestructive testing; process control; process monitoring; resistors; semiconductor device testing; LDMOS parameters; high voltage analog process; high voltage component; implanted p-body pinch resistor; nondestructive electrical process monitor; shallow trench isolation depth monitor; Centralized control; Electrical resistance measurement; Immune system; Instruments; Microelectronics; Monitoring; Nondestructive testing; Resistors; USA Councils; Voltage; Depth; Etest; Monitor; P-body; Pinch Resistor; Shallow Trench Isolation (STI);

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374449

Filename

4252399