Title :
A New Test Structure for Shallow Trench Isolation (STI) Depth Monitor
Author :
Wang, Qingfeng ; Pendharkar, Sameer ; Hu, Binghua ; Russell, Bill ; Jones-Williams, Pam
Author_Institution :
Texas Instrum. Inc., Dallas
Abstract :
A non-destructive electrical process monitor has been developed for shallow trench isolation (STI) depth control in an advanced high voltage analog process. An implanted p-body (LDMOS back gate) pinch resistor has been demonstrated to accurately measure the depth of the shallow trench isolation. STI depth can be further correlated to critical LDMOS parameters such as Rdson (on resistance) and BVdss (off-state device breakdown). This technique can be easily implemented in the scribe line to monitor STI depth as well as to characterize variation in high voltage component.
Keywords :
MOSFET; isolation technology; nondestructive testing; process control; process monitoring; resistors; semiconductor device testing; LDMOS parameters; high voltage analog process; high voltage component; implanted p-body pinch resistor; nondestructive electrical process monitor; shallow trench isolation depth monitor; Centralized control; Electrical resistance measurement; Immune system; Instruments; Microelectronics; Monitoring; Nondestructive testing; Resistors; USA Councils; Voltage; Depth; Etest; Monitor; P-body; Pinch Resistor; Shallow Trench Isolation (STI);
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374449
