A UVLO Circuit in SiC Compatible With Power MOSFET Integration

Author

Glover, Michael D. ; Shepherd, Peter ; Francis, A. Matt ; Mudholkar, Mihir ; Mantooth, Homer Alan ; Ericson, M. Nance ; Frank, S. Shane ; Britton, Charles L. ; Marlino, Laura D. ; McNutt, Ty R. ; Barkley, Adam ; Whitaker, Barbee ; Lostetter, Alexander B.

Author_Institution

Univ. of Arkansas, Fayetteville, AR, USA

Volume

2

Issue

3

fYear

2014

fDate

Sept. 2014

Firstpage

425

Lastpage

433

Abstract

The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0°C and 200°C. Captured data show the circuit to be functional over a temperature range from -55°C to 300°C. The design of the circuit and test results is presented.

Keywords

battery chargers; driver circuits; low-power electronics; network topology; power MOSFET; silicon compounds; wide band gap semiconductors; MOSFET switching speed; SiC; UVLO circuit; circuit design; frequency 250 kHz; low-voltage 4H silicon carbide process; plug-in hybrid vehicle charger; power MOSFET integration; protection circuitry block; rise-fall times; single-chip gate driver topology; single-chip integration; temperature -55 degC to 200 degC; undervoltage lock-out circuit; Logic gates; MOSFET; Monitoring; Resistors; Silicon carbide; Switches; Vehicles; MOSFET circuits; power MOSFET; silicon carbide (SiC); temperature;

fLanguage

English

Journal_Title

Emerging and Selected Topics in Power Electronics, IEEE Journal of

Publisher

ieee

ISSN

2168-6777

Type

jour

DOI

10.1109/JESTPE.2014.2313119

Filename

6777275