Title :
An Approach to Detect Negative Bias Temperature Instability (NBTI) in Ultra-Deep Submicron Technologies
Author :
Carlsten, Ronald ; Ralston-Good, Jeremy ; Goodman, Douglas
Author_Institution :
Ridgetop Group, Inc., Tucson, AZ
Abstract :
Negative bias temperature instability (NBTI) is a pMOSFET´s degradation mechanism that can result in threshold voltage shift. This shift, if large enough, can cause serious reliability concerns for MOSFET analog and digital circuits. This paper presents a prognostic circuit that measures the VT shift in a pMOSFET and reports its state-of-health.
Keywords :
MOSFET; reliability; stability; MOSFET analog circuits; MOSFET digital circuits; negative bias temperature instability; pMOSFET degradation; reliability concerns; threshold voltage shift; ultra-deep submicron technologies; Aerospace electronics; Circuit faults; Degradation; Digital circuits; Inverters; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Threshold voltage; Titanium compounds;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.378339
