DocumentCode :
464817
Title :
Threshold Voltage Variation Effects on Aging-Related Hard Failure Rates
Author :
Greskamp, Brian ; Sarangi, Smruti R. ; Torrellas, Josep
Author_Institution :
Illinois Univ., Urbana-Champaign, IL
fYear :
2007
fDate :
27-30 May 2007
Firstpage :
1261
Lastpage :
1264
Abstract :
This paper quantifies the impact of threshold voltage variation on aging-related hard failure rates in a high-performance 65nm processor. Simulations show that threshold voltage variations can accelerate aging substantially, depending on the thermal resistance of the heatsink and the total leakage power of the processor before variation. For unfavorable values of these parameters, our models suggest that the time at which 1% of the processors have failed can decrease by about 60%.
Keywords :
heat sinks; microprocessor chips; thermal resistance; 65 nm; aging-related hard failure rates; heat sink; high-performance processor; thermal resistance; threshold voltage variation effects; Aging; Electromigration; Energy consumption; Failure analysis; Packaging; Temperature dependence; Thermal degradation; Thermal resistance; Thermal stresses; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
Type :
conf
DOI :
10.1109/ISCAS.2007.378340
Filename :
4252875
Link To Document :
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