DocumentCode
464860
Title
Above Threshold pFET InjectionModeling intended for ProgrammingFloating-Gate Systems
Author
Hasler, Paul ; Basu, Arindam ; Kozil, Sctt
Author_Institution
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250. Email: phasler@ece.gatech.edu
fYear
2007
fDate
27-30 May 2007
Firstpage
1557
Lastpage
1560
Abstract
We present a first-order model for pFET hotelectron injection that is consistent for subthreshold and above threshold current levels. Injection is a critical phenomena for high-precision programming of floating-gate devices, and accurate modeling fuels continued improvement of programming techniques. Previous work has shown good modeling for subthreshold operation; in this work we extend the modeling throughout the region, enabling improved programming algorithms for floating-gate switch elements, resistors, and highperformance circuit elements. We discuss the implementation of this model in CADENCE´s version of SPICE.
Keywords
Application specific integrated circuits; Capacitors; Digital integrated circuits; Physics; Resistors; Secondary generated hot electron injection; Subthreshold current; Switches; Switching circuits; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA, USA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378709
Filename
4252949
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