DocumentCode
464958
Title
Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories
Author
Salama, Aly E. ; Sharroush, Sherif M. ; Fekry, Mahmoud Y.
Author_Institution
Department of Electrical Engineering, Faculty of Engineering, Cairo, Egypt. aesalama@ieee.org
fYear
2007
fDate
27-30 May 2007
Firstpage
2268
Lastpage
2271
Abstract
The sense margin available for sensing by the sense amplifier during the read access of 1T-1C FRAM cells affects the accuracy of the reading process. In this paper, a procedure for determining the sensing window of the 1T-1C FRAM cell will be discussed. Also, three proposed techniques for increasing the sense margin will be discussed.
Keywords
Capacitors; Circuits; Ferroelectric films; Ferroelectric materials; Logic; MOSFETs; Nonvolatile memory; Random access memory; Read-write memory; Voltage; Ferroelectric memory; read access; sense margin;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA, USA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378735
Filename
4253126
Link To Document