DocumentCode
464994
Title
All-CMOS High-Speed CML Gates with Active Shunt-Peaking
Author
Kalantari, Nader ; Green, Michael M.
Author_Institution
Starport Syst., Irvine, CA
fYear
2007
fDate
27-30 May 2007
Firstpage
2554
Lastpage
2557
Abstract
The design of CMOS current-mode logic (CML) logic gates is discussed. A novel CML transistor-only topology that realizes an active inductive load is presented. This topology makes use of thicker oxide transistors often available in standard CMOS processes and an additional, higher, supply voltage that does not conduct any dc current. It is shown by simulation results that this topology provides favorable dc biasing compared to existing techniques while exhibiting better performance.
Keywords
CMOS logic circuits; current-mode logic; logic gates; CMOS current-mode logic; active shunt-peaking; logic gates; Active inductors; CMOS logic circuits; CMOS process; Circuit simulation; Circuit topology; Logic design; Logic gates; Resistors; Roentgenium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.377836
Filename
4253198
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