DocumentCode :
464994
Title :
All-CMOS High-Speed CML Gates with Active Shunt-Peaking
Author :
Kalantari, Nader ; Green, Michael M.
Author_Institution :
Starport Syst., Irvine, CA
fYear :
2007
fDate :
27-30 May 2007
Firstpage :
2554
Lastpage :
2557
Abstract :
The design of CMOS current-mode logic (CML) logic gates is discussed. A novel CML transistor-only topology that realizes an active inductive load is presented. This topology makes use of thicker oxide transistors often available in standard CMOS processes and an additional, higher, supply voltage that does not conduct any dc current. It is shown by simulation results that this topology provides favorable dc biasing compared to existing techniques while exhibiting better performance.
Keywords :
CMOS logic circuits; current-mode logic; logic gates; CMOS current-mode logic; active shunt-peaking; logic gates; Active inductors; CMOS logic circuits; CMOS process; Circuit simulation; Circuit topology; Logic design; Logic gates; Resistors; Roentgenium; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
Type :
conf
DOI :
10.1109/ISCAS.2007.377836
Filename :
4253198
Link To Document :
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