DocumentCode :
465036
Title :
A Self-Biased and FPN-Compensated Digital APS for Hybrid CMOS Imagers
Author :
Serra-Graells, F. ; Margarit, J.M. ; Terés, L.
Author_Institution :
Centro Nacional de Microelectron., Inst. de Microelectron. de Barcelona
fYear :
2007
fDate :
27-30 May 2007
Firstpage :
2850
Lastpage :
2853
Abstract :
This paper presents a new low-power and compact digital active pixel sensor (APS) for hybrid CMOS imagers. The proposed self-biased topology includes built-in dark current and input capacitance compensation, mixed integration, A/D conversion and a purely digital I/O interface, all at pixel level. Furthermore, full FPN compensation and AGC capabilities are also supplied by digitally pre-programming the individual sensitivity of each APS during the read-out phase without any speed reduction. In this sense, experimental results are reported for a 100mumtimes100mum complete APS circuit in standard 0.35mum CMOS 2-polySi 4-metal technology for IR applications.
Keywords :
CMOS digital integrated circuits; CMOS image sensors; low-power electronics; 0.35 micron; 100 micron; 2-polySi 4-metal technology; A/D conversion; automatic gain control; compact digital active pixel sensor; dark current compensation; digital I/O interface; fixed pattern noise; hybrid CMOS imagers; input capacitance compensation; mixed integration; self-biased topology; speed reduction; CMOS image sensors; CMOS technology; Capacitive sensors; Chemical technology; Dark current; Integrated circuit interconnections; Parasitic capacitance; Pixel; Sensor arrays; Signal processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
Type :
conf
DOI :
10.1109/ISCAS.2007.378766
Filename :
4253272
Link To Document :
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