Title :
Endurance Enhancement of Flash-Memory Storage, Systems: An Efficient Static Wear Leveling Design
Author :
Chang, Yuan-Hao ; Hsieh, Jen-Wei ; Kuo, Tei-Wei
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
This work is motivated by the strong demand of reliability enhancement over flash memory. Our objective is to improve the endurance of flash memory with limited overhead and without many modifications to popular implementation designs, such as flash translation layer protocol (FTL) and NAND flash translation layer protocol (NFTL). A static wear leveling mechanism is proposed with limited memory-space requirements and an efficient implementation. The properties of the mechanism are then explored with various implementation considerations. Through a series of experiments based on a realistic trace, we show that the endurance of FTL and NFTL could be significantly improved with limited system overheads.
Keywords :
NAND circuits; flash memories; logic design; semiconductor device reliability; wear; NAND flash translation layer protocol; endurance enhancement; flash memory storage systems; reliability enhancement; static wear leveling design; Computer network management; Computer network reliability; Computer science; Design engineering; Flash memory; Memory management; Multimedia systems; Permission; Protocols; Reliability engineering; Design; Experimentation; Management; Measurement; Performance; Reliability; endurance; flash memory; reliability; wear leveling;
Conference_Titel :
Design Automation Conference, 2007. DAC '07. 44th ACM/IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-59593-627-1