• DocumentCode
    465283
  • Title

    Endurance Enhancement of Flash-Memory Storage, Systems: An Efficient Static Wear Leveling Design

  • Author

    Chang, Yuan-Hao ; Hsieh, Jen-Wei ; Kuo, Tei-Wei

  • Author_Institution
    Nat. Taiwan Univ., Taipei
  • fYear
    2007
  • fDate
    4-8 June 2007
  • Firstpage
    212
  • Lastpage
    217
  • Abstract
    This work is motivated by the strong demand of reliability enhancement over flash memory. Our objective is to improve the endurance of flash memory with limited overhead and without many modifications to popular implementation designs, such as flash translation layer protocol (FTL) and NAND flash translation layer protocol (NFTL). A static wear leveling mechanism is proposed with limited memory-space requirements and an efficient implementation. The properties of the mechanism are then explored with various implementation considerations. Through a series of experiments based on a realistic trace, we show that the endurance of FTL and NFTL could be significantly improved with limited system overheads.
  • Keywords
    NAND circuits; flash memories; logic design; semiconductor device reliability; wear; NAND flash translation layer protocol; endurance enhancement; flash memory storage systems; reliability enhancement; static wear leveling design; Computer network management; Computer network reliability; Computer science; Design engineering; Flash memory; Memory management; Multimedia systems; Permission; Protocols; Reliability engineering; Design; Experimentation; Management; Measurement; Performance; Reliability; endurance; flash memory; reliability; wear leveling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference, 2007. DAC '07. 44th ACM/IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    0738-100X
  • Print_ISBN
    978-1-59593-627-1
  • Type

    conf

  • Filename
    4261174