DocumentCode
465283
Title
Endurance Enhancement of Flash-Memory Storage, Systems: An Efficient Static Wear Leveling Design
Author
Chang, Yuan-Hao ; Hsieh, Jen-Wei ; Kuo, Tei-Wei
Author_Institution
Nat. Taiwan Univ., Taipei
fYear
2007
fDate
4-8 June 2007
Firstpage
212
Lastpage
217
Abstract
This work is motivated by the strong demand of reliability enhancement over flash memory. Our objective is to improve the endurance of flash memory with limited overhead and without many modifications to popular implementation designs, such as flash translation layer protocol (FTL) and NAND flash translation layer protocol (NFTL). A static wear leveling mechanism is proposed with limited memory-space requirements and an efficient implementation. The properties of the mechanism are then explored with various implementation considerations. Through a series of experiments based on a realistic trace, we show that the endurance of FTL and NFTL could be significantly improved with limited system overheads.
Keywords
NAND circuits; flash memories; logic design; semiconductor device reliability; wear; NAND flash translation layer protocol; endurance enhancement; flash memory storage systems; reliability enhancement; static wear leveling design; Computer network management; Computer network reliability; Computer science; Design engineering; Flash memory; Memory management; Multimedia systems; Permission; Protocols; Reliability engineering; Design; Experimentation; Management; Measurement; Performance; Reliability; endurance; flash memory; reliability; wear leveling;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2007. DAC '07. 44th ACM/IEEE
Conference_Location
San Diego, CA
ISSN
0738-100X
Print_ISBN
978-1-59593-627-1
Type
conf
Filename
4261174
Link To Document