DocumentCode :
465498
Title :
DC Correct Operation in MOBILE Inverters
Author :
Quintana, José M. ; Avedillo, María J. ; Núñez, Juan
Author_Institution :
Univ. de Sevilla, Sevilla
Volume :
1
fYear :
2006
fDate :
6-9 Aug. 2006
Firstpage :
479
Lastpage :
483
Abstract :
The verification of an appropriate DC behavior is essential before analyzing other aspects of the operation of a circuit. This paper analyses the case of MOBILE inverters and determines the relations that circuit representative parameters (such as the relation of the ratio of gate width to the gate length of the HFET, and the area factors in the RTDs) must verify to obtain a MOBILE inverter which operates correctly. The difficulty of an analytical study has been overcome by resorting to series expansions for both the RTD and the HFET I-V characteristics in the points of interest, so obtaining simplified descriptions for describing these behaviors.
Keywords :
high electron mobility transistors; logic gates; resonant tunnelling diodes; HFET I-V characteristics; MOBILE inverters; RTD; dc correct operation; monostable-bistable logic element; resonant tunnelling diodes; Current density; Driver circuits; HEMTs; Inverters; Logic devices; MODFETs; Microwave integrated circuits; Resonant tunneling devices; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
Conference_Location :
San Juan
ISSN :
1548-3746
Print_ISBN :
1-4244-0172-0
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2006.382103
Filename :
4267180
Link To Document :
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