Title :
Temperature-Compensated High-Frequency Surface Acoustic Wave Device
Author :
Changjian Zhou ; Yi Yang ; Hualin Cai ; Tian-Ling Ren ; Mansun Chan ; Yang, Cary Y.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
We report high-frequency surface acoustic wave (SAW) devices with excellent temperature stability using a layered structure consisting of single-crystal LiNbO3 thin film on SiO2/LiNbO3 substrate. SAW devices with a wavelength of 2 μm have been fabricated and several wave modes ranging from ~ 1.5 to 2.1 GHz have been obtained. With the SiO2 interlayer providing the temperature compensation and the top single-crystal Z-cut LiNbO3 piezoelectric thin film for acoustic wave excitation, the fabricated SAW devices exhibit excellent temperature coefficients of frequency. Theoretical calculations are presented to elucidate temperature compensation of the proposed layered structure.
Keywords :
piezoelectric thin films; stability; surface acoustic wave devices; SAW devices; SiO2-LiNbO3; acoustic wave excitation; high-frequency surface acoustic wave device; layered structure; piezoelectric thin film; single-crystal thin film; temperature compensation; temperature stability; temperature-compensated acoustic wave device; top single-crystal Z-cut; wavelength 2 mum; Lithium niobate; Radio frequency; Substrates; Surface acoustic wave devices; Surface acoustic waves; Thin films; ${rm LiNbO}_{3}$ thin film; radio frequency; surface acoustic wave (SAW); temperature compensation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2283305
