• DocumentCode
    466624
  • Title

    A 2-Mask NMOS Process Design Fabricate and Test Module for Use In Microelectronics Instruction and Process Development

  • Author

    Parent, D.W.

  • Author_Institution
    San Jose State Univ., San Jose
  • fYear
    2006
  • fDate
    25-28 June 2006
  • Firstpage
    57
  • Lastpage
    62
  • Abstract
    We have developed a simplified 2-mask n-type metal oxide semiconductor (NMOS) transistor process design and verification module for electrical engineering students enrolled in the Microelectronic Manufacturing Methods class/laboratory at San Jose State University. We have run this module for three years and have found that the simplified process allows the students to learn more because they have the time to design the process fabricate and test in one semester. Student learning is also enhanced because it allows students to make and correct mistakes in the processing the devices. We have also found that the simplified process saves time in process development of more complex processes, by reducing the number of photolithography steps required to fabricate a transistor.
  • Keywords
    MOS integrated circuits; MOSFET; electronic engineering education; masks; photolithography; semiconductor device testing; semiconductor process modelling; 2-mask NMOS process design; San Jose State University; electrical engineering students; metal oxide semiconductor transistor process design; microelectronic manufacturing methods class/laboratory; microelectronics instruction; photolithography; process development; semiconductor process development; student learning; CMOS process; Circuit synthesis; MOS devices; Microelectronics; Physics; Process design; Semiconductor device manufacture; Semiconductor materials; Testing; Windows;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
  • Conference_Location
    San Jose, CA
  • ISSN
    0749-6877
  • Print_ISBN
    1-4244-0267-0
  • Type

    conf

  • DOI
    10.1109/UGIM.2006.4286353
  • Filename
    4286353