Title :
Frequency Multiplier Design Based on Multiple-Peak R-BJT-NDR Devices Fabricated by SiGe Technology
Author :
Liang, Dong-Shong ; Gan, Kwang-Jow ; Tu, Chun-Da ; Tsai, Cher-Shiung ; Chen, Yaw-Hwang
Author_Institution :
Kun Shan Univ., Tainan County
Abstract :
The negative differential resistance (NDR) device studied in this work is composed of the resistors (R) and bipolar junction transistors (BJT) devices. We regard this NDR device as R-BJT-NDR. Comparing to the resonant tunneling diode (RTD), this novel NDR device is made of resistors and transistors. Therefore, we can fabricate this NDR device by standard Si-based CMOS or SiGe-based BiCMOS process. A circuit with two NDR. regions is obtained by combining two R-BJT-NDR devices in vertical integration. We can obtain two-peak I-V characteristics in the combined circuit. Circuit fabricated from the combination exhibits three stable operating points for frequency multiplier that can multiply the input signal frequency by three. The R-BJT-NDR device and frequency multiplier are implemented by the standard 0.35 mum SiGe BiCMOS process.
Keywords :
CMOS integrated circuits; Ge-Si alloys; frequency multipliers; heterojunction bipolar transistors; negative resistance devices; resistors; resonant tunnelling diodes; semiconductor materials; Si-based CMOS process; SiGe technology; SiGe-based BiCMOS process; bipolar junction transistors; frequency multiplier design; multiple-peak R-BJT-NDR devices; negative differential resistance; resistors; resonant tunneling diode; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; Frequency; Germanium silicon alloys; Resistors; Resonant tunneling devices; Semiconductor diodes; Silicon germanium; Voltage; 0.35??m SiGe BiCMOS process; R-BJT-NDR device; frequency multiplier; negative differential resistance;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0267-0
DOI :
10.1109/UGIM.2006.4286386
