Design of an Ultra-low Power Receiver for 2.4GHz Applications in 90nm CMOS

Author

Tabesh, Maryam ; Aflatooni, Koorosh

Author_Institution

San Jose State Univ., San Jose

fYear

2006

fDate

25-28 June 2006

Firstpage

241

Lastpage

246

Abstract

An ultra low power receiver operating in 2.4GHz ISM band is designed using 90nm CMOS PTM with a IV supply voltage. This direct conversion receiver has an integrated noise figure of 4.15 dB in the 1kHz to 10MHz band. The input referred IP₃ for offset of 100MHz is -22.4dBm. The LO leakage to the RF port is less than -148dB. A base-band gain stage and buffer are used to provide a reasonable output impedance and power gain. With this, input and output are matched to 50 Omega and 500 Omega with both S₁₁ and S₂₂ being better than -25dB. The LNA, mixers and the base-band stages with the biasing network consume less than 1.1 mW.

Keywords

CMOS integrated circuits; buffer circuits; low-power electronics; radio receivers; CMOS; ISM band; IV supply voltage; LO leakage; RF port; base-band gain; buffer; direct conversion receiver; frequency 1 kHz to 10000 kHz; frequency 100 MHz; frequency 2.4 GHz; impedance; noise figure 4.15 dB; power gain; size 90 nm; ultra-low power receiver; 1f noise; Band pass filters; CMOS technology; Circuits; Costs; Energy consumption; Image converters; Linearity; Noise reduction; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2006 16th Biennial

Conference_Location

San Jose, CA

ISSN

0749-6877

Print_ISBN

1-4244-0267-0

Type

conf

DOI

10.1109/UGIM.2006.4286391

Filename

4286391