Title :
A Compact Model of Submicron Channel MOS Transistor Transconductance for Analog Circuit Simulation
Author :
Brezeanu, Gheorghe ; Sevcenco, Andrei
Author_Institution :
Univ. Politehnica, Bucharest
Abstract :
An analytical model to estimate the submicron MOS channel transconductance is presented. The model is continuous between conditions where velocity saturation can be either dominant or negligible, depending on the CMOS processes and bias voltages. New parameters are proposed for the description of the saturation velocity effects.
Keywords :
CMOS analogue integrated circuits; MOSFET; analogue simulation; CMOS; analog circuit simulation; analytical model; bias voltage; compact model; submicron channel MOS transistor transconductance; velocity saturation; Ambient intelligence; Analog circuits; Analytical models; Bandwidth; CMOS process; CMOS technology; Circuit simulation; MOSFETs; Transconductance; Voltage;
Conference_Titel :
Signals, Circuits and Systems, 2007. ISSCS 2007. International Symposium on
Conference_Location :
Iasi
Print_ISBN :
1-4244-0969-1
Electronic_ISBN :
1-4244-0969-1
DOI :
10.1109/ISSCS.2007.4292673
