Title :
Nonlinear Effects in the Layered Semiconductor Structures
Author :
Bulgakov, A.A. ; Shramkova, O.V.
Author_Institution :
Inst. of Radiophys. & Electron., NAS of Ukraine, Kharkov
Abstract :
The nonlinear interaction of waves inside a two-dimensional layered periodic structure consisting of alternating semiconductor layers is studied. It was discovered that for the three-wave interaction processes the phase of a matrix nonlinear element changes depending upon the dispersion of dielectric permittivities of layers.
Keywords :
nonlinear media; periodic structures; permittivity; semiconductors; alternating semiconductor layers; dielectric permittivities dispersion; layered semiconductor periodic structures; matrix nonlinear element; nonlinear wave interaction; three-wave interaction processes; two-dimensional layered structure; Charge carriers; Electromagnetic propagation; Electromagnetic scattering; Frequency; Maxwell equations; Nonlinear equations; Optical propagation; Periodic structures; Semiconductor materials; Slabs;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294622
