Amplification of Space Charge Waves of Millimeter Wave Range in N-Gan Films

Author

Grimalsky, V. ; Koshevaya, S. ; Diaz-A, F. ; Moroz, I.

Author_Institution

Autonomous Univ. of Morelos (UAEM), Cuernavaca

Volume

1

fYear

2007

fDate

25-30 June 2007

Firstpage

348

Lastpage

350

Abstract

Spatial amplification of millimeter wave range (f = 30 - 200 GHz) space charge waves in n-GaN films is investigated theoretically. An amplification is due to the negative differential conductivity in GaN films placed onto a semi-infinite substrate is considered and possible spatial increments are calculated. Both diffusion-drift equations for volume electron concentration and also an approximation of two-dimensional electron gas were used jointly with the Poisson equation for the electric field. There no principal difference between these two approaches in the frequency range f les 150 GHz.

Keywords

III-V semiconductors; Poisson equation; amplification; diffusion; electrical conductivity; gallium compounds; high-frequency effects; semiconductor thin films; space charge waves; two-dimensional electron gas; wide band gap semiconductors; GaN; Poisson equation; amplification; diffusion-drift equations; electric field; frequency 30 GHz to 200 GHz; millimeter wave range; n-GaN films; negative differential conductivity; semi-infinite substrate; space charge waves; two-dimensional electron gas; volume electron concentration; Boundary conditions; Conductive films; Conductivity; Dielectric substrates; Electron mobility; Frequency; Gallium arsenide; Gallium nitride; Poisson equations; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on

Conference_Location

Kharkov

Print_ISBN

1-4244-1237-4

Type

conf

DOI

10.1109/MSMW.2007.4294658

Filename

4294658