Title :
Modeling of Impulse Photomultiplier on Basis of PN-I-PN Structure with Avalanche P-N Junctions
Author :
Lukin, K.A. ; Cerdeira, H.A. ; Maksymov, P.P.
Author_Institution :
Inst. for Radiophys. & Electron., Nat. Acad. of Sci. of Ukraine, Kharkov
Abstract :
It was shown in this paper that the dynamic range of the amplification of avalanche-cascade multiplication (ACPM) achieves 80 dB and limited by of spatial charge of carrier mobility. Fast-acting of ACPM makes a few ten nanoseconds and is determined by the number of cascade of multiplication and time of drift of carriers in a pn-i-pn structure. ACPM is a low-noise device - his power equivalent to noise (NEP) more than on an order less NEP avalanche photodiode (APD). ACPM is intended for amplification of impulses of photocurrent, duration of which does not exceed the half-cycle of structure, and period of their following more time fast-acting. Thus, ACPM is the perspective impulsive photomultiplier of new type, principle of action of which is based on the avalanche-cascade multiplication of primary photocurrent.
Keywords :
avalanche breakdown; avalanche photodiodes; carrier mobility; p-n junctions; photomultipliers; semiconductor device models; amplification; avalanche p-n junctions; avalanche photodiode; avalanche-cascade multiplication; carrier mobility; impulse photomultiplier; photocurrent; pn-i-pn structure; Charge carrier processes; Infrared spectra; Infrared surveillance; Noise level; Optical noise; P-n junctions; Photodetectors; Photomultipliers; Radiation monitoring; Working environment noise;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294667