DocumentCode :
468874
Title :
Quantum, Power, & Compound Semiconductors - Ultra High Speed SiGe and InP-based HBTs
Author :
Ghione, Giovanni ; Ida, Minoru
Author_Institution :
Politecnico di Torino
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
649
Lastpage :
649
Keywords :
CMOS technology; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Laboratories; Paper technology; Photonics; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419027
Filename :
4419027
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=468874
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