Electrically pumped Ge Laser at room temperature

Author

Cheng, T.-H. ; Kuo, P.-S. ; Lee, C.T. ; Liao, M.H. ; Hung, T.-A. ; Liu, C.W.

Author_Institution

Nat. Taiwan Univ., Taipei

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

659

Lastpage

662

Abstract

The stimulated emission from (110) Ge was observed in the metal-insulator-semiconductor (MIS) laser diode with a simple Fabry-Perot cavity by current injection at room temperature. The lasing characteristics consist of (1) sudden increase of efficiency in the light-out current-in curve, (2) the transverse electrical mode polarization, (3) the strong directivity of the far field pattern, (4) the narrow line width in the emission spectra above the threshold, and (5) the population inversion confirmed by fitting the spontaneous emission spectrum near the threshold current. The lasing wavelength is suitable for Si photonics due to the emission energy lower the Si bandgap.

Keywords

Fabry-Perot resonators; MIS devices; germanium; laser cavity resonators; photonic band gap; semiconductor lasers; silicon; spontaneous emission; stimulated emission; Fabry-Perot cavity; Ge; Si; Si bandgap; Si photonics; current injection; electrically pumped Ge laser; emission spectra; far field pattern; lasing characteristics; lasing wavelength; light-out current-in curve; metal-insulator-semiconductor laser diode; population inversion; spontaneous emission spectrum; stimulated emission; threshold current; transverse electrical mode polarization; Curve fitting; Diode lasers; Fabry-Perot; Laser excitation; Laser modes; Metal-insulator structures; Optical polarization; Pump lasers; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419030

Filename

4419030