DocumentCode
468877
Title
Type-II GaAsSb/InP DHBTs with Record fT = 670 GHz and Simultaneous fT , fMAX ≫ 400 GHz
Author
Snodgrass, William ; Wu, Bing-Ruey ; Cheng, K.Y. ; Feng, Milton
Author_Institution
Univ. of Illinois at Urbana-Champaign, Urbana
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
663
Lastpage
666
Abstract
Type-II GaAsSb/InP double-HBTs (DHBTs) with a 20 nm base and 60 nm collector exhibit record transistor performance with f T = 670 GHz and off-state collector-emitter breakdown voltage of 3.2 V. Similar devices with a 30 nm base and 100 nm collector achieve simultaneous fi = 480 GHz and f MAX = 420 GHZ with 4.3 V breakdown voltage.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; nanoelectronics; double heterojunction bipolar transistors; frequency 670 GHz; off-state collector-emitter breakdown voltage; size 20 nm; size 60 nm; type-II double-HBT; voltage 3.2 V; Breakdown voltage; Cutoff frequency; Double heterojunction bipolar transistors; Electrons; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419031
Filename
4419031
Link To Document