Title :
600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT x BVCEO ≫ 2.5 THz-V at Room Temperature
Author :
Liu, H.G. ; Ostinelli, O. ; Zeng, Y. ; Bolognesi, C.R.
Author_Institution :
ETH-Zurich, Zurich
Abstract :
We describe the realization of ternary base InP/Ga(As,Sb) DHBTs, where the grading is implemented by ramping the base As/Sb composition ratio from the collector to the emitter side: this enables a cutoff frequency fT of 603 GHz at room temperature with a breakdown voltage BVCEO = 4.2 V, for a record fTxBVCEO product of 2.53 THz-V. Device performance improves further with cooling to reach fT ≫ 700 GHz with BVCEO= 4.4 V at 5K. To the best of our knowledge, this represents the highest fT ever reported for a DHBT of any kind. The fTxBVCEO ≫ 3.10 THz-V at 5 K is also unprecedented.
Keywords :
III-V semiconductors; MOCVD; cryogenics; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device models; semiconductor epitaxial layers; DHBT epitaxial layer growth; Ga(AsSb); InP-GaAsSb-InP; MOCVD; base-collector heterojunction; breakdown voltage; collector current density; cryogenic temperatures; double-heterostructure bipolar transistor; emitter contact; frequency 600 GHz; frequency 603 GHz; temperature 293 K to 298 K; temperature 5 K; voltage 4.2 V; voltage 4.4 V; Double heterojunction bipolar transistors; Epitaxial growth; Epitaxial layers; Fabrication; Indium phosphide; MOCVD; Temperature; Thermal resistance; Wet etching; Wideband;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419032
