DocumentCode
468880
Title
Ferrite-Partially-Filled on-Chip RF Inductor Fabricated Using Low-Temperature Nano-Powder-Mixed-Photoresist Filling Technique for Standard CMOS
Author
Yang, Chen ; Liu, Feng ; Ren, Tian-LiIng ; Liu, Li-Tian ; Chen, Guang ; Guan, Xiao-Kanng ; Wang, Albert ; Yue, Zhen-Xing
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
1038
Lastpage
1040
Abstract
This paper reports new fully-CMOS-compatible on-chip RF inductors with Ni-Zn-Cu and Co2Z-type ferrite-partially-filled structures fabricated using a novel low-temperature nano-powder- mixed-photoresist filling technique. Measured improvements are up to +35% in L and +250% in Q across multi-GHz with f0 to 11.4 GHz.
Keywords
CMOS digital integrated circuits; barium compounds; cobalt compounds; copper compounds; inductors; nanoelectronics; nanoparticles; nickel compounds; photoresists; radiofrequency integrated circuits; system-on-chip; zinc compounds; CMOS-compatible integrated inductors; Ni0.3Zn0.6Cu0.1Fe2O4-Ba3Co2Fe24O41; RF SOC; ferrite- partially-filled structures; ferrite-fully-filled transistor-size inductors; low-temperature nanopowder-mixed-technique; on-chip integrated RF inductor fabrication; photoresist filling technique; standard CMOS technology; CMOS technology; Coils; Etching; Ferrite films; Filling; Inductance; Magnetic flux; Powders; Radio frequency; Thin film inductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419034
Filename
4419034
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