Embedded Flash on 90nm Logic Technology & Beyond for FPGAs

Author

Kojima, H. ; Ema, T. ; Anezaki, T. ; Ariyoshi, J. ; Ogawa, H. ; Yoshizawa, K. ; Mehta, S. ; Fong, S. ; Logie, S. ; Smoak, R. ; Rutledge, D.

Author_Institution

Fujitsu Ltd., Akiruno

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

677

Lastpage

680

Abstract

We have successfully integrated an embedded flash technology into a 90 nm leading edge logic technology to realize superior FPGA products with only 10% additional process steps. The stacked gate memory cell is completely compatible with Cu and a low-k interconnection and has excellent flash reliability. Achieving the same logic performance as the non-embedded technology maximizes the utilization of design resources between the non-embedded technology and the embedded flash technology.

Keywords

embedded systems; field programmable gate arrays; flash memories; integrated circuit interconnections; integrated circuit reliability; integrated logic circuits; FPGA; copper interconnection; edge logic technology; embedded flash technology; flash reliability; low-k interconnection; size 90 nm; stacked gate memory cell; Data security; Diodes; Field programmable gate arrays; Lattices; Logic design; Logic devices; Logic programming; PROM; Parasitic capacitance; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419036

Filename

4419036