Title :
Embedded Flash on 90nm Logic Technology & Beyond for FPGAs
Author :
Kojima, H. ; Ema, T. ; Anezaki, T. ; Ariyoshi, J. ; Ogawa, H. ; Yoshizawa, K. ; Mehta, S. ; Fong, S. ; Logie, S. ; Smoak, R. ; Rutledge, D.
Author_Institution :
Fujitsu Ltd., Akiruno
Abstract :
We have successfully integrated an embedded flash technology into a 90 nm leading edge logic technology to realize superior FPGA products with only 10% additional process steps. The stacked gate memory cell is completely compatible with Cu and a low-k interconnection and has excellent flash reliability. Achieving the same logic performance as the non-embedded technology maximizes the utilization of design resources between the non-embedded technology and the embedded flash technology.
Keywords :
embedded systems; field programmable gate arrays; flash memories; integrated circuit interconnections; integrated circuit reliability; integrated logic circuits; FPGA; copper interconnection; edge logic technology; embedded flash technology; flash reliability; low-k interconnection; size 90 nm; stacked gate memory cell; Data security; Diodes; Field programmable gate arrays; Lattices; Logic design; Logic devices; Logic programming; PROM; Parasitic capacitance; Protection;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419036
