Title :
Si/SiGe Epitaxy: a Ubiquitous Process for Advanced Electronics
Author :
Dutartre, D. ; Loubet, N. ; Brossard, F. ; Vandelle, B. ; Chevalier, P. ; Chantre, A. ; Monfray, S. ; Fenouillet-Beranger, C. ; Pouydebasque, A. ; Skotnicki, T.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
This contribution is focusing on low temperature epitaxy of SiGe alloys that are required in advanced devices. In a first part, we give a certain background on RTCVD and SiGe(C) materials. In a second step, we develop some specific applications important and fundamental in our technologies: selective epitaxy of SiGeC for bipolar base and Si/SiGe epitaxies for the fabrication of thin films CMOS. In each case, we present major improvements of the process capabilities or innovative structures. And finally, we propose the association of Si/SiGe epi and SiGe selective etch as an effective way to fabricate objects at the nano-scale.
Keywords :
Ge-Si alloys; MOSFET; carbon; chemical vapour deposition; etching; heterojunction bipolar transistors; nanoelectronics; semiconductor epitaxial layers; silicon; thin film transistors; HBT; RTCVD; Si-SiGe; SiGeC; heterojunction bipolar transistors; low temperature silicon-germanium alloy epitaxy; nanoscale fabrication; selective etching; thin film CMOS fabrication; ubiquitous process; Atomic layer deposition; Capacitive sensors; Epitaxial growth; Etching; Germanium silicon alloys; Kinetic theory; Lattices; Silicon germanium; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419039
