DocumentCode :
468885
Title :
Localized SOI technology: an innovative Low Cost self-aligned process for Ultra Thin Si-film on thin BOX integration for Low Power applications
Author :
Monfray, S. ; Samson, MP ; Dutartre, D. ; Ernst, T. ; Rouchouze, E. ; Renaud, D. ; Guillaumot, B. ; Chanemougame, D. ; Rabille, G. ; Borel, S. ; Colonna, JP ; Arvet, C. ; Loubet, N. ; Campidelli, Y. ; Hartmann, JM ; Vandroux, L. ; Bensahel, D. ; Toffoli,
Author_Institution :
STMicroelectronics, Crolles
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
693
Lastpage :
696
Abstract :
In this paper, we demonstrate the first successful integration of "localized SOI" devices integrated with HfO2/TiN gate stack on dedicated areas of bulk CMOS substrates. We propose a low cost innovative approach based on the SON technology, where the buried sacrificial SiGe layer can be removed directly from the edges of the active area in a self-aligned process, to form an entire fully-depleted structure isolated from the substrate. NMOS devices with gate length down to 32 nm are demonstrated on 6 nm Si-films, allowing the control of Ioff current down to 0.1 nA/mum for 440 muA/mum Ion @Vdd=1.1 V. We also demonstrated the impact of the TiN (as metal gate) thickness and compressive CESL (contact etch stop layer) boosters for ultra-thin film PMOS, allowing +15% and +22% additional improvement in performances, respectively. This localized-SOI approach is dedicated to low power devices where the leakage reduction is crucial. The possibility for power management is also demonstrated thank to the very thin buried dielectric and to the ground-plane implantations, allowing body factor as high as 80 mV/Von short devices.
Keywords :
CMOS integrated circuits; low-power electronics; semiconductor thin films; silicon; silicon-on-insulator; CESL; CMOS substrates; NMOS devices; SOI technology; contact etch stop layer; power management; silicon; thin BOX integration; CMOS technology; Costs; Germanium silicon alloys; Hafnium oxide; Isolation technology; MOS devices; Silicon germanium; Substrates; Thickness control; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419040
Filename :
4419040
Link To Document :
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